acceptor defect meaning in Chinese

受体缺陷
受主缺陷

By means of chemical etching , microscope observation , eelectron probe x - ray micro - analyzer ( epma ) , the micro - distribution of c acceptor defect in lec si - gaas wafer is investigated , the results show that there is serious influence of the density and distribution of dislocations on the distribution of c impurity in wafer
本文通过ab腐蚀、 koh腐蚀，金相显微镜观察，透射电镜能谱分析，电子探针x射线微区分析，研究了液封直拉法生长的非掺半绝缘砷化镓( lec ， si - gaas )单晶中碳的微区分布。